Negative differential resistivity in ferroelectric thin-film current-voltage relationships

The current-voltage relationship I(V) for several different ferroelectric thin films often exhibits an apparent negative differential resistivity. In the present paper we show that in lead zirconate-titanate (PZT) this is a spurious artifact arising from rapid (parametric) measurement techniques and...

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Veröffentlicht in:Integrated ferroelectrics 1994-02, Vol.4 (1), p.85-92
Hauptverfasser: Scott, J. F., Melnick, B. M., Cuchiaro, J. D., Zuleeg, R., Araujo, C. A., McMillan, L. D., Scott, M. C.
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Sprache:eng
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Zusammenfassung:The current-voltage relationship I(V) for several different ferroelectric thin films often exhibits an apparent negative differential resistivity. In the present paper we show that in lead zirconate-titanate (PZT) this is a spurious artifact arising from rapid (parametric) measurement techniques and that it disappears for d.c. measurements made with measuring times ≥300 s. However, in other ferroelectric materials (selected samples with unusually high trap densities) it appears to be a genuine effect characterized by an I = aV 3 current-voltage relationship at high current densities (≥100 nA/cm 2 ), I(V) hysteresis above a "pseudo-breakdown voltage," and distinct V 2 -to-V 3 cross-over threshold.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589408018662