Negative differential resistivity in ferroelectric thin-film current-voltage relationships
The current-voltage relationship I(V) for several different ferroelectric thin films often exhibits an apparent negative differential resistivity. In the present paper we show that in lead zirconate-titanate (PZT) this is a spurious artifact arising from rapid (parametric) measurement techniques and...
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Veröffentlicht in: | Integrated ferroelectrics 1994-02, Vol.4 (1), p.85-92 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The current-voltage relationship I(V) for several different ferroelectric thin films often exhibits an apparent negative differential resistivity. In the present paper we show that in lead zirconate-titanate (PZT) this is a spurious artifact arising from rapid (parametric) measurement techniques and that it disappears for d.c. measurements made with measuring times ≥300 s. However, in other ferroelectric materials (selected samples with unusually high trap densities) it appears to be a genuine effect characterized by an I = aV
3
current-voltage relationship at high current densities (≥100 nA/cm
2
), I(V) hysteresis above a "pseudo-breakdown voltage," and distinct V
2
-to-V
3
cross-over threshold. |
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ISSN: | 1058-4587 1607-8489 |
DOI: | 10.1080/10584589408018662 |