Conducting oxide electrodes for ferroelectric films

Suitability of oxide electronic conductors [e.g. ruthenium oxide (RuO x ) and indium-tin-oxide (ITO)] as contact metallization for ferroelectric films (e.g. PbZr x Ti 1−x O 3 ) was investigated using techniques such as Rutherford backscattering spectrometry, x-ray diffraction and electron spectroscopy for chemical analysis. Thin films of RuO x and ITO were deposited on Si substrates by reactive sputtering. Either PbO or PZT (x = 0.53) films were deposited onto the conducting oxides and the specimens were annealed at various temperatures between 400°C and 700°C. Less intermixing was found in Si/RuO x / PZT films when compared to Si/ITO/PZT under similar processing conditions. The ferroelectric properties of PZT films on RuO x electrodes are compared to those on Pt electrodes. The PZT films show improved fatigue properties on RuO x electrodes.