Pulsed laser deposition (PLD) of oriented bismuth titanate films for integrated electronic applications

In this paper we describe recent successes of growth of epitaxial bismuth titanate (BTO) films by pulsed laser deposition (PLD) suitable for electro-optic and electrical switching device structures, and fabrication of an improved gate structure for a ferroelectric memory FET (FEMFET). TEM and x-ray results indicate that excellent crystalline quality BTO films were achieved on LaAlO 3 . Polarization switching was demonstrated for BTO capacitors with epitaxial superconducting YBa 2 Cu 3 O 7 as the lower electrode. Using an SiO 2 buffer layer, a BTO/Si structure was fabricated and direct charge modulation in the Si by polarization reversal in the BTO was demonstrated.