Peculiarities of heavy ion channeling

Depth distributions of implanted Mg + - and Ca + -ions and the corresponding radiation damage were studied for different channeling orientations of silicon crystals. The shape of the implantation profiles is discussed by using simple models for dechanneling and energy loss processes. A correlation b...

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Veröffentlicht in:Radiation effects and defects in solids 1993-01, Vol.125 (1-3), p.147-155
Hauptverfasser: Kerkow, H., Wedell, R.
Format: Artikel
Sprache:eng
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Zusammenfassung:Depth distributions of implanted Mg + - and Ca + -ions and the corresponding radiation damage were studied for different channeling orientations of silicon crystals. The shape of the implantation profiles is discussed by using simple models for dechanneling and energy loss processes. A correlation between dechanneling, damage production and depth distributions of the channeled ions could be observed. This correlation is seen by the maxima shifts in damage and implanted ion distributions between channel and random incidence.
ISSN:1042-0150
1029-4953
DOI:10.1080/10420159308225496