Misfit dislocations in lattice-mismatched epitaxial films

This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detai...

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Veröffentlicht in:	Critical reviews in solid state and materials sciences 1992-01, Vol.17 (6), p.507-546
Hauptverfasser:	Hull, Robert, Bean, John C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties epitaxy Exact sciences and technology lattice-mismatched misfit dislocations Physics Solid surfaces and solid-solid interfaces strained layer Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detail. In addition, there is a brief review of the principal properties of dislocations in bulk semiconductors and an outline of existing models for strained layer stability.
ISSN:	1040-8436 1547-6561
DOI:	10.1080/10408439208244585