Transport and optical properties of the layer semiconductor p-type GaSe doped with Li

Hall effect and photoluminescence (PL) measurements have been made on Lidoped p-type GaSe. The carrier transport is dominated by the two acceptor levels located at about 0.04 and 0.08eV above the valence band. A new emission band at 2.030eV (at 77K) is observed in the PL spectra of samples. For the...

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Veröffentlicht in:	Philosophical magazine letters 1999-08, Vol.79 (8), p.575-579
Hauptverfasser:	Shigetomi, S., Ikari, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electron states Electronic transport in condensed matter Exact sciences and technology Galvanomagnetic and other magnetotransport effects Impurity and defect levels Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other nonmetals Other solid inorganic materials Photoluminescence Physics
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Zusammenfassung:	Hall effect and photoluminescence (PL) measurements have been made on Lidoped p-type GaSe. The carrier transport is dominated by the two acceptor levels located at about 0.04 and 0.08eV above the valence band. A new emission band at 2.030eV (at 77K) is observed in the PL spectra of samples. For the samples doped from 0.02 to 0.21 at.%, the PL intensity increases with increasing Li concentration. The acceptor level of 0.08eV observed by Hall effect measurements has the same energy position as the radiative recombination centre.
ISSN:	0950-0839 1362-3036
DOI:	10.1080/095008399176959