A model for the Staebler-Wronski effect

Based on experimental results of transient photoresponse and photo-induced reversible echanges for the same a-Si : H pin structure, a model is proposed for the Staebler-Wronski effect, by which reversible changes of the photo-induced dangling-bond density can be interpreted. We show that the origin of the effect is a space-charge redistribution caused by the corresponding reversible changes of internal electric fields in a-Si : H. A discussion is given of the reversible transitions described by T + 3 + T − 3 ⇌2T 0 3 during illumination and annealing, respectively.