X-ray studies of the semiconductors snas, InTe, TlS and TISe UP TO 43 GPa

The structures of the semiconductors SnAs, InTe, TlS and TlSe have been investigated using high-pressure (HP) diffraction technique-a gasketed diamond anvil cell (DAC)'. The pressure was measured by ruby fluorescence technique. The first order reversible transition from NaCl to CsCl structure w...

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Veröffentlicht in:	High pressure research 1989-11, Vol.1 (5-6), p.325-327
Hauptverfasser:	Demishev, G. B., Kabalkina, S. S., Kolobyanina, T. N., Dyuzheva, T. I., Losev, V. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	lattice pressure Semiconductors structure transition
Online-Zugang:	Volltext
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