X-ray studies of the semiconductors snas, InTe, TlS and TISe UP TO 43 GPa

The structures of the semiconductors SnAs, InTe, TlS and TlSe have been investigated using high-pressure (HP) diffraction technique-a gasketed diamond anvil cell (DAC)'. The pressure was measured by ruby fluorescence technique. The first order reversible transition from NaCl to CsCl structure was found in SnAs with volume discontinuity 5% the two-phase area extends from 32 to 43 GPa. The volume change V/v,(P) of the SnAs is shown in Figure 1. In agreement with the gomology rule3, the same pressure effect has been found in Sn x Sb1−x atP=9 GPa2.