Ferroelectricity in DTAAP

The results of dielectric studies of deuterated TAAP grown at different temperatures are reported. These results together with the Raman spectral data show that 100% deuteration is possible only if the crystals are grown at low temperatures. The transition temperature continuously increases with inc...

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Veröffentlicht in:Ferroelectrics. Letters section 1988-07, Vol.9 (1), p.19-25
Hauptverfasser: Shashikala, M. N., Sangunni, K. S., Bhat, H. L.
Format: Artikel
Sprache:eng
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Zusammenfassung:The results of dielectric studies of deuterated TAAP grown at different temperatures are reported. These results together with the Raman spectral data show that 100% deuteration is possible only if the crystals are grown at low temperatures. The transition temperature continuously increases with increasing deuterium content from 45°C for TAAP to ∼ 87°C for DTAAP indicating that hydrogen bonds play an important role in the ferroelectric transition of this crystal.
ISSN:0731-5171
1563-5228
DOI:10.1080/07315178808200690