Photoenhanced electroluminescence in amorphous silicon p-i-n junctions

Photoenhanced electroluminescence in amorphous silicon p-i-n junctions

We report a novel effect in a-Si p-i-n junctions, in which photoenhancement of the electroluminescence efficiency (η EL ) occurs under illumination and forward bias. In the limit of high illumination (or large photocurrents, i ph ), the EL intensity varies linearly with i ph , with a quantum efficie...

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Veröffentlicht in:Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties. Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1982-06, Vol.45 (6), p.573-582
Hauptverfasser: Nashashibi, T. S., Searle, T. M., Austin, I. G., Rhodes, A. J., Gibson, R. A., Comber, P. G. Le
Format: Artikel
Sprache:eng
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Zusammenfassung:We report a novel effect in a-Si p-i-n junctions, in which photoenhancement of the electroluminescence efficiency (η EL ) occurs under illumination and forward bias. In the limit of high illumination (or large photocurrents, i ph ), the EL intensity varies linearly with i ph , with a quantum efficiency four to eight times larger than for dark currents. Some possible models are discussed.
ISSN:1364-2812
1463-6417
DOI:10.1080/01418638208227611