Climb of dissociated dislocations in silicon

Climb of dissociated dislocations in silicon

Climb of dissociated dislocations in silicon has been observed by high-resolution electron microscopy. No nucleation of Frank loops has ever been observed, but climb in silicon occurs by formation of non-dissociated loops. Extrinsic stacking faults can be formed during climb.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties Physics of condensed matter. Defects and mechanical properties, 1989-09, Vol.60 (3), p.385-400
Hauptverfasser: Thibault-Desseaux, J., Kirchner, H. O. K., Putaux, J. L.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Materials Science
Physics
Structure of solids and liquids
crystallography
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 400
container_issue 3
container_start_page 385
container_title Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties
container_volume 60
creator Thibault-Desseaux, J.
Kirchner, H. O. K.
Putaux, J. L.
description Climb of dissociated dislocations in silicon has been observed by high-resolution electron microscopy. No nucleation of Frank loops has ever been observed, but climb in silicon occurs by formation of non-dissociated loops. Extrinsic stacking faults can be formed during climb.
doi_str_mv 10.1080/01418618908213868
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1080_01418618908213868</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1298082851</sourcerecordid><originalsourceid>FETCH-LOGICAL-c484t-ccefc634d6d2a8a8cd0acc5d18b0706f30c21c107ccfb02bb6803dbad3cba0bd3</originalsourceid><addsrcrecordid>eNp1kE1LxDAQhoMouH78AG8LiiBYnWnabApeZPELFrzoOUwnLUayjSZdxX9vy6oHxdMMM8_7DvMKcYBwhqDhHLBArVBXoHOUWukNMcFCQaaqKt8Uk3GfDQBsi52UngEAZwATcTr3bllPQzu1LqXAjvrGjr0PTL0LXZq6bpqcdxy6PbHVkk_N_lfdFY_XVw_z22xxf3M3v1xkXOiiz5iblpUsrLI5adJsgZhLi7qGGahWAufICDPmtoa8rpUGaWuykmuC2spdcbL2fSJvXqJbUvwwgZy5vVyYcQYyL7VS1RsO7PGafYnhddWk3ixd4sZ76pqwSiYvsYQS9AAe_gKfwyp2wx8G80oPuelytMM1xTGkFJv25z6CGZM2f5IeNEdfzpSYfBupY5d-hEqVWGg5YBdrzHVtiEt6D9Fb09OHD_FbI_-_8gmNq458</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1298082851</pqid></control><display><type>article</type><title>Climb of dissociated dislocations in silicon</title><source>Taylor &amp; Francis</source><source>Periodicals Index Online</source><creator>Thibault-Desseaux, J. ; Kirchner, H. O. K. ; Putaux, J. L.</creator><creatorcontrib>Thibault-Desseaux, J. ; Kirchner, H. O. K. ; Putaux, J. L.</creatorcontrib><description>Climb of dissociated dislocations in silicon has been observed by high-resolution electron microscopy. No nucleation of Frank loops has ever been observed, but climb in silicon occurs by formation of non-dissociated loops. Extrinsic stacking faults can be formed during climb.</description><identifier>ISSN: 0141-8610</identifier><identifier>EISSN: 1460-6992</identifier><identifier>DOI: 10.1080/01418618908213868</identifier><identifier>CODEN: PMAADG</identifier><language>eng</language><publisher>London: Taylor &amp; Francis Group</publisher><subject>Condensed Matter ; Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) ; Exact sciences and technology ; Materials Science ; Physics ; Structure of solids and liquids; crystallography</subject><ispartof>Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1989-09, Vol.60 (3), p.385-400</ispartof><rights>Copyright Taylor &amp; Francis Group, LLC 1989</rights><rights>1990 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c484t-ccefc634d6d2a8a8cd0acc5d18b0706f30c21c107ccfb02bb6803dbad3cba0bd3</citedby><cites>FETCH-LOGICAL-c484t-ccefc634d6d2a8a8cd0acc5d18b0706f30c21c107ccfb02bb6803dbad3cba0bd3</cites><orcidid>0000-0002-9760-5369</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/01418618908213868$$EPDF$$P50$$Ginformaworld$$H</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/01418618908213868$$EHTML$$P50$$Ginformaworld$$H</linktohtml><link.rule.ids>230,314,776,780,881,27846,27901,27902,59620,60409</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=6651483$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-03258669$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Thibault-Desseaux, J.</creatorcontrib><creatorcontrib>Kirchner, H. O. K.</creatorcontrib><creatorcontrib>Putaux, J. L.</creatorcontrib><title>Climb of dissociated dislocations in silicon</title><title>Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties</title><description>Climb of dissociated dislocations in silicon has been observed by high-resolution electron microscopy. No nucleation of Frank loops has ever been observed, but climb in silicon occurs by formation of non-dissociated loops. Extrinsic stacking faults can be formed during climb.</description><subject>Condensed Matter</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)</subject><subject>Exact sciences and technology</subject><subject>Materials Science</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0141-8610</issn><issn>1460-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><sourceid>K30</sourceid><recordid>eNp1kE1LxDAQhoMouH78AG8LiiBYnWnabApeZPELFrzoOUwnLUayjSZdxX9vy6oHxdMMM8_7DvMKcYBwhqDhHLBArVBXoHOUWukNMcFCQaaqKt8Uk3GfDQBsi52UngEAZwATcTr3bllPQzu1LqXAjvrGjr0PTL0LXZq6bpqcdxy6PbHVkk_N_lfdFY_XVw_z22xxf3M3v1xkXOiiz5iblpUsrLI5adJsgZhLi7qGGahWAufICDPmtoa8rpUGaWuykmuC2spdcbL2fSJvXqJbUvwwgZy5vVyYcQYyL7VS1RsO7PGafYnhddWk3ixd4sZ76pqwSiYvsYQS9AAe_gKfwyp2wx8G80oPuelytMM1xTGkFJv25z6CGZM2f5IeNEdfzpSYfBupY5d-hEqVWGg5YBdrzHVtiEt6D9Fb09OHD_FbI_-_8gmNq458</recordid><startdate>19890901</startdate><enddate>19890901</enddate><creator>Thibault-Desseaux, J.</creator><creator>Kirchner, H. O. K.</creator><creator>Putaux, J. L.</creator><general>Taylor &amp; Francis Group</general><general>Taylor &amp; Francis</general><general>Taylor and Francis</general><general>Informa UK (Taylor &amp; Francis)</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>HAGHG</scope><scope>JILTI</scope><scope>K30</scope><scope>PAAUG</scope><scope>PAWHS</scope><scope>PAWZZ</scope><scope>PAXOH</scope><scope>PBHAV</scope><scope>PBQSW</scope><scope>PBYQZ</scope><scope>PCIWU</scope><scope>PCMID</scope><scope>PCZJX</scope><scope>PDGRG</scope><scope>PDWWI</scope><scope>PETMR</scope><scope>PFVGT</scope><scope>PGXDX</scope><scope>PIHIL</scope><scope>PISVA</scope><scope>PJCTQ</scope><scope>PJTMS</scope><scope>PLCHJ</scope><scope>PMHAD</scope><scope>PNQDJ</scope><scope>POUND</scope><scope>PPLAD</scope><scope>PQAPC</scope><scope>PQCAN</scope><scope>PQCMW</scope><scope>PQEME</scope><scope>PQHKH</scope><scope>PQMID</scope><scope>PQNCT</scope><scope>PQNET</scope><scope>PQSCT</scope><scope>PQSET</scope><scope>PSVJG</scope><scope>PVMQY</scope><scope>PZGFC</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-9760-5369</orcidid></search><sort><creationdate>19890901</creationdate><title>Climb of dissociated dislocations in silicon</title><author>Thibault-Desseaux, J. ; Kirchner, H. O. K. ; Putaux, J. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c484t-ccefc634d6d2a8a8cd0acc5d18b0706f30c21c107ccfb02bb6803dbad3cba0bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Condensed Matter</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)</topic><topic>Exact sciences and technology</topic><topic>Materials Science</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Thibault-Desseaux, J.</creatorcontrib><creatorcontrib>Kirchner, H. O. K.</creatorcontrib><creatorcontrib>Putaux, J. L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Periodicals Index Online Segment 12</collection><collection>Periodicals Index Online Segment 32</collection><collection>Periodicals Index Online</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - West</collection><collection>Primary Sources Access (Plan D) - International</collection><collection>Primary Sources Access &amp; Build (Plan A) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Midwest</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Northeast</collection><collection>Primary Sources Access (Plan D) - Southeast</collection><collection>Primary Sources Access (Plan D) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Southeast</collection><collection>Primary Sources Access (Plan D) - South Central</collection><collection>Primary Sources Access &amp; Build (Plan A) - UK / I</collection><collection>Primary Sources Access (Plan D) - Canada</collection><collection>Primary Sources Access (Plan D) - EMEALA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - North Central</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - South Central</collection><collection>Primary Sources Access &amp; Build (Plan A) - International</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - International</collection><collection>Primary Sources Access (Plan D) - West</collection><collection>Periodicals Index Online Segments 1-50</collection><collection>Primary Sources Access (Plan D) - APAC</collection><collection>Primary Sources Access (Plan D) - Midwest</collection><collection>Primary Sources Access (Plan D) - MEA</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - Canada</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - EMEALA</collection><collection>Primary Sources Access &amp; Build (Plan A) - APAC</collection><collection>Primary Sources Access &amp; Build (Plan A) - Canada</collection><collection>Primary Sources Access &amp; Build (Plan A) - West</collection><collection>Primary Sources Access &amp; Build (Plan A) - EMEALA</collection><collection>Primary Sources Access (Plan D) - Northeast</collection><collection>Primary Sources Access &amp; Build (Plan A) - Midwest</collection><collection>Primary Sources Access &amp; Build (Plan A) - North Central</collection><collection>Primary Sources Access &amp; Build (Plan A) - Northeast</collection><collection>Primary Sources Access &amp; Build (Plan A) - South Central</collection><collection>Primary Sources Access &amp; Build (Plan A) - Southeast</collection><collection>Primary Sources Access (Plan D) - UK / I</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - APAC</collection><collection>Primary Sources Access—Foundation Edition (Plan E) - MEA</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Thibault-Desseaux, J.</au><au>Kirchner, H. O. K.</au><au>Putaux, J. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Climb of dissociated dislocations in silicon</atitle><jtitle>Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties</jtitle><date>1989-09-01</date><risdate>1989</risdate><volume>60</volume><issue>3</issue><spage>385</spage><epage>400</epage><pages>385-400</pages><issn>0141-8610</issn><eissn>1460-6992</eissn><coden>PMAADG</coden><abstract>Climb of dissociated dislocations in silicon has been observed by high-resolution electron microscopy. No nucleation of Frank loops has ever been observed, but climb in silicon occurs by formation of non-dissociated loops. Extrinsic stacking faults can be formed during climb.</abstract><cop>London</cop><pub>Taylor &amp; Francis Group</pub><doi>10.1080/01418618908213868</doi><tpages>16</tpages><orcidid>https://orcid.org/0000-0002-9760-5369</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0141-8610
ispartof Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1989-09, Vol.60 (3), p.385-400
issn 0141-8610
1460-6992
language eng
recordid cdi_crossref_primary_10_1080_01418618908213868
source Taylor & Francis; Periodicals Index Online
subjects Condensed Matter
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Materials Science
Physics
Structure of solids and liquids
crystallography
title Climb of dissociated dislocations in silicon
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T08%3A17%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Climb%20of%20dissociated%20dislocations%20in%20silicon&rft.jtitle=Philosophical%20magazine.%20A,%20Physics%20of%20condensed%20matter.%20Defects%20and%20mechanical%20properties&rft.au=Thibault-Desseaux,%20J.&rft.date=1989-09-01&rft.volume=60&rft.issue=3&rft.spage=385&rft.epage=400&rft.pages=385-400&rft.issn=0141-8610&rft.eissn=1460-6992&rft.coden=PMAADG&rft_id=info:doi/10.1080/01418618908213868&rft_dat=%3Cproquest_cross%3E1298082851%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1298082851&rft_id=info:pmid/&rfr_iscdi=true