Climb of dissociated dislocations in silicon

Climb of dissociated dislocations in silicon has been observed by high-resolution electron microscopy. No nucleation of Frank loops has ever been observed, but climb in silicon occurs by formation of non-dissociated loops. Extrinsic stacking faults can be formed during climb.

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Bibliographische Detailangaben
Veröffentlicht in:	Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties Physics of condensed matter. Defects and mechanical properties, 1989-09, Vol.60 (3), p.385-400
Hauptverfasser:	Thibault-Desseaux, J., Kirchner, H. O. K., Putaux, J. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) Exact sciences and technology Materials Science Physics Structure of solids and liquids crystallography
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Beschreibung
Zusammenfassung:	Climb of dissociated dislocations in silicon has been observed by high-resolution electron microscopy. No nucleation of Frank loops has ever been observed, but climb in silicon occurs by formation of non-dissociated loops. Extrinsic stacking faults can be formed during climb.
ISSN:	0141-8610 1460-6992
DOI:	10.1080/01418618908213868