Electron irradiation influence on the thermoelectric and galvanomagnetic properties of the CdxHg1-xTe solid solutions

The thermoelectric and galvanomagnetic properties in the CdxHg1_xTe solid solution samples (x = 0.12; 0.15) irradiated at 300 K by electrons (3.5 MeV; by integrated fluxes up to 1.46 × 10 18 e/cm 2 ) have been investigated in a wide temperature range 4.2-300 K and in magnetic fields 0-22 kOe. It has been discovered that the electron irradiation of Cd x Hg 1-x Te crystals leads to an increase of the Hall coefficient and a decrease of the thermo e.m.f. sign inversion temperature. The concentrations and mobilities of electron and hole have been calculated on a basis of quantitative analysis of galvanomagnetic data. It has been shown that the kinetic coefficient behavior upon irradiation is due to the Te vacancy-based type radiation defect origin.