Annealing of ion-implanted Si using a scanned CW laser system
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| Veröffentlicht in: | Radiation effects 1980-01, Vol.48 (1-4), p.195-201 |
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| Hauptverfasser: | , , , , , , , , , |
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| Sprache: | eng |
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| container_end_page | 201 |
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| container_issue | 1-4 |
| container_start_page | 195 |
| container_title | Radiation effects |
| container_volume | 48 |
| creator | Gat, A. Gerzberg, L. Gibbons, J. F. Lietoila, A. Johnson, N. M. Magee, T. J. Peng, J. Deline, V. Williams, P. Evans, C. A. |
| description | |
| doi_str_mv | 10.1080/00337578008209253 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0033-7579 |
| ispartof | Radiation effects, 1980-01, Vol.48 (1-4), p.195-201 |
| issn | 0033-7579 |
| language | eng |
| recordid | cdi_crossref_primary_10_1080_00337578008209253 |
| source | Taylor & Francis:Master (3349 titles) |
| title | Annealing of ion-implanted Si using a scanned CW laser system |
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