Ionization enhanced annealing in phosphorus implanted silicon

Thermal annealing properties of silicon samples implanted at room temperature with P ions have been investigated both in the dark and under high energy electron irradiation and uv excitation at temperatures of 440 and 480°C. A significant increase of electrical activity under ionizing conditions has been observed compared to thermal annealing performed in the dark. The resistivity changes during annealing with ionizing radiation behave in a similar way to the ones in the dark with the exception of larger ion doses. The results obtained suggest that the ionization enhances the annealing of electrically active post-implantation defects compensating the implanted ions.