Use of the channelling technique and the theory of flux peaking effect to determine the location of b in si

Use of the channelling technique and the theory of flux peaking effect to determine the location of b in si

An experimental and theoretical treatment of the determination of : oron atoms in single crystalline silicon, using the channelling effect and flux peaking, is described.

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Bibliographische Detailangaben
Veröffentlicht in:Radiat. Eff., v. 25, no. 3, pp. 167-173 v. 25, no. 3, pp. 167-173, 1975-01, Vol.25 (3), p.167-173
Hauptverfasser: Beloshitsky, V. V., Dikii, N. P., Kumakhov, M. A., Matyash, P. P., Skakun, N. A.
Format: Artikel
Sprache:eng
Schlagworte:
640301 -Physics Research-Atomic, Molecular & Chemical Physics-Beams & Their Reactions
ATOMS
BORON
CHANNELING
IMPURITIES
ION IMPLANTATION
MONOCRYSTALS
N60100 -Physics (Atomic & Molecular)-Atomic, Electron, Ion & Molecular Beams & Reactions
N72100 -Physics (Radiation & Shielding)-Radiation Physics
PEAKS
RADIATION FLUX
SILICON- ION CHANNELING
SPATIAL DISTRIBUTION
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Beschreibung
Zusammenfassung:An experimental and theoretical treatment of the determination of : oron atoms in single crystalline silicon, using the channelling effect and flux peaking, is described.
ISSN:0033-7579
2331-3455
DOI:10.1080/00337577508235386