Computer studies of boron ion channeling in silicon single crystals

The motion of 200 keV B ions in the [111] direction in a silicon single crystal has been investigated using a computer simulation method. Profiles of the depth distribution of implanted ions for both an ideal crystal and a crystal with thermal vibrations have been obtained. A study of the defect dis...

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Veröffentlicht in:	Radiat. Eff. 13: No. 3-4, 237-42(Apr 1972) 237-42(Apr 1972), 1972-04, Vol.13 (3-4), p.237-242
Hauptverfasser:	Eltekov, V. A., Karpuzov, D. S., Martynenko, YU. V., Rubakha, E. A., Simonov, V. A., Yurasova, V. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANGULAR DISTRIBUTION BORON IONS BORON IONS/channeling in silicon single crystals at 200 keV, computer studies of COMPUTER CALCULATIONS CRYSTAL LATTICES INTERACTIONS ION BEAMS ION CHANNELING ION IMPLANTATION IONS KEV RANGE 100-1000 MONOCRYSTALS N74100 -Physics (Solid State)-Radiation Effects RANGE SILICON SILICON/ion channeling in single crystals, computer studies depth and defect distributions for 200-keV boron SIMULATORS SPATIAL DISTRIBUTION
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