Computer studies of boron ion channeling in silicon single crystals

Computer studies of boron ion channeling in silicon single crystals

The motion of 200 keV B ions in the [111] direction in a silicon single crystal has been investigated using a computer simulation method. Profiles of the depth distribution of implanted ions for both an ideal crystal and a crystal with thermal vibrations have been obtained. A study of the defect dis...

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Veröffentlicht in:Radiat. Eff. 13: No. 3-4, 237-42(Apr 1972) 237-42(Apr 1972), 1972-04, Vol.13 (3-4), p.237-242
Hauptverfasser: Eltekov, V. A., Karpuzov, D. S., Martynenko, YU. V., Rubakha, E. A., Simonov, V. A., Yurasova, V. E.
Format: Artikel
Sprache:eng
Schlagworte:
ANGULAR DISTRIBUTION
BORON IONS
BORON IONS/channeling in silicon single crystals at 200 keV, computer studies of
COMPUTER CALCULATIONS
CRYSTAL LATTICES
INTERACTIONS
ION BEAMS
ION CHANNELING
ION IMPLANTATION
IONS
KEV RANGE 100-1000
MONOCRYSTALS
N74100 -Physics (Solid State)-Radiation Effects
RANGE
SILICON
SILICON/ion channeling in single crystals, computer studies depth and defect distributions for 200-keV boron
SIMULATORS
SPATIAL DISTRIBUTION
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Beschreibung
Zusammenfassung:The motion of 200 keV B ions in the [111] direction in a silicon single crystal has been investigated using a computer simulation method. Profiles of the depth distribution of implanted ions for both an ideal crystal and a crystal with thermal vibrations have been obtained. A study of the defect distribution has been carried out.
ISSN:0033-7579
2331-3455
DOI:10.1080/00337577208231185