LPE growth of InAsSbP for mid-infrared (2-4 μm) optoelectronic devices

The quaternary alloy InAsSbP, grown by liquid phase epitaxy (LPE), is a promising material for 2-4 μm infrared light sources which are of particular interest for use in solid-state gas sensors. The LPE growth of the mixed III-V compound semiconductor alloy InAsSbP, lattice-matched to InAs, was inves...

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Veröffentlicht in:	International journal of electronics 1994-09, Vol.77 (3), p.317-323
Hauptverfasser:	K PARRY, M., KRIER, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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