LPE growth of InAsSbP for mid-infrared (2-4 μm) optoelectronic devices

The quaternary alloy InAsSbP, grown by liquid phase epitaxy (LPE), is a promising material for 2-4 μm infrared light sources which are of particular interest for use in solid-state gas sensors. The LPE growth of the mixed III-V compound semiconductor alloy InAsSbP, lattice-matched to InAs, was investigated over a range of growth temperatures. Measurements of the alloy composition, surface morphology and photoluminescence emission spectra were made in order to gain information about the material quality and its suitability for optoelectronic device fabrication. Corresponding optimized liquid phase epitaxial growth resulted in material with better alloy stoichiometry and higher luminescence efficiency.