Photoferroelectric sensitivity enhancement in PLZT by thermal diffusion of metals

We reported in previous papers that both the near-UV and visible photosensitivities of PLZT ceramic can be greatly enhanced by ion implantation. We present new results which suggest that a combination of thermal diffusion of Al and implantation of Ne produces photosensitivity enhancement greater tha...

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Veröffentlicht in:Ferroelectrics 1983-11, Vol.50 (1), p.85-90
Hauptverfasser: Land, C. E., Peercy, P. S.
Format: Artikel
Sprache:eng
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Zusammenfassung:We reported in previous papers that both the near-UV and visible photosensitivities of PLZT ceramic can be greatly enhanced by ion implantation. We present new results which suggest that a combination of thermal diffusion of Al and implantation of Ne produces photosensitivity enhancement greater than that achieved with ion implantation alone.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150198308014436