A new ferroelectric-semiconductor V2O5

A new ferroelectric-semiconductor V2O5

On the basis of dielectric and electric measurements it is shown that vanadium pentoxide, V2O5 is a ferroelectric-semiconductor with the Curie temperature Tc = 250°C. The forbidden zone width Eg = lev; at 25°C = 5.5 × 10-4 Ohm-1 cm-1, the carriers concentration n = 1.6 × 1013 cm-3, the charge carrie...

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Veröffentlicht in:Ferroelectrics 1980-01, Vol.23 (1), p.47-49
Hauptverfasser: Ismailzade, I. H., Alecberov, A. I., Ismailov, R. M., Aliyez, I. M., Rzayev, D. A.
Format: Artikel
Sprache:eng
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Zusammenfassung:On the basis of dielectric and electric measurements it is shown that vanadium pentoxide, V2O5 is a ferroelectric-semiconductor with the Curie temperature Tc = 250°C. The forbidden zone width Eg = lev; at 25°C = 5.5 × 10-4 Ohm-1 cm-1, the carriers concentration n = 1.6 × 1013 cm-3, the charge carriers mobility u = 400 cm2v-1. V2O5 is a n-type semiconductor and possesses a considerable photo-conductivity.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150198008224810