Long-Range Charge Hopping in DNA

The fundamental mechanisms of charge migration in DNA are pertinent for current developments in molecular electronics and electrochemistry-based chip technology. The energetic control of hole (positive ion) multistep hopping transport in DNA proceeds via the guanine, the nucleobase with the lowest o...

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Veröffentlicht in:Proceedings of the National Academy of Sciences - PNAS 1999-10, Vol.96 (21), p.11713-11716
Hauptverfasser: Bixon, M., Giese, Bernd, Wessely, Stephan, Langenbacher, Thomas, Michel-Beyerle, Maria E., Jortner, Joshua
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Sprache:eng
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Zusammenfassung:The fundamental mechanisms of charge migration in DNA are pertinent for current developments in molecular electronics and electrochemistry-based chip technology. The energetic control of hole (positive ion) multistep hopping transport in DNA proceeds via the guanine, the nucleobase with the lowest oxidation potential. Chemical yield data for the relative reactivity of the guanine cations and of charge trapping by a triple guanine unit in one of the strands quantify the hopping, trapping, and chemical kinetic parameters. The hole-hopping rate for superexchange-mediated interactions via two intervening AT base pairs is estimated to be 109s-1at 300 K. We infer that the maximal distance for hole hopping in the duplex with the guanine separated by a single AT base pair is 300± 70 angstrom. Although we encounter constraints for hole transport in DNA emerging from the number of the mediating AT base pairs, electron transport is expected to be nearly sequence independent because of the similarity of the reduction potentials of the thymine and of the cytosine.
ISSN:0027-8424
1091-6490
DOI:10.1073/pnas.96.21.11713