Chemical vapour-phase deposition of ruthenium-containing thin films

Chemical vapour-phase deposition of ruthenium-containing thin films

Chemical and materials science aspects of formation of ruthenium-containing thin films for modern high-precision technologies by chemical vapour deposition (CVD) methods are considered. Chemical approaches to the synthesis of main precursors used in MOCVD techniques, layer growth processes as well a...

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Veröffentlicht in:Russian chemical reviews 2014-01, Vol.83 (8), p.758-782
Hauptverfasser: Vasilyev, V Yu, Morozova, N B, Igumenov, I K
Format: Artikel
Sprache:eng
Schlagworte:
Chemical vapor deposition
Deposition
Electrical properties
Formations
Materials science
Precursors
Synthesis
Thin films
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Beschreibung
Zusammenfassung:Chemical and materials science aspects of formation of ruthenium-containing thin films for modern high-precision technologies by chemical vapour deposition (CVD) methods are considered. Chemical approaches to the synthesis of main precursors used in MOCVD techniques, layer growth processes as well as main physicochemical and electrical properties of ruthenium-containing thin films are analyzed. The bibliography includes 120 references.
ISSN:0036-021X
1468-4837
DOI:10.1070/RC2014v083n08ABEH004402