Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70
The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage an...
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| Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2017-05, Vol.47 (4), p.291-293 |
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| container_title | Quantum electronics (Woodbury, N.Y.) |
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| creator | Ladugin, M.A. Marmalyuk, A.A. Padalitsa, A.A. Bagaev, T.A. Andreev, A.Yu Telegin, K.Yu Lobintsov, A.V. Davydova, E.I. Sapozhnikov, S.M. Danilov, A.I. Podkopaev, A.V. Ivanova, E.B. Simakov, V.A. |
| description | The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%. |
| doi_str_mv | 10.1070/QEL16365 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1070_QEL16365</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2357621290</sourcerecordid><originalsourceid>FETCH-LOGICAL-c341t-1af336c6cd2c9b67c5fa5829546ea601b534b5cd95d4cbb71e84ff03502a08b83</originalsourceid><addsrcrecordid>eNqNkE9LAzEUxBdRUGrBjxDQg5e1-Z_ssZRahYIIeg7Z7AuNrLvbJIv47d1SpVcvM-_wY5g3RXFD8APBCi9e11simRRnxRXhUpdcVdX5dGPJSqWJvizmKYUaC86x0FJfFWZrE0TUhL4BVNuYJknQoL5Dy3Zjl2lxELQfbZfHz_IL2hbtIEPsU46jy2OEhL5C3iHbIfA-uACd-0bjgHKPFL4uLrxtE8x_fVa8P67fVk_l9mXzvFpuS8c4ySWxnjHppGuoq2qpnPBWaFoJLsFKTGrBeC1cU4mGu7pWBDT3HjOBqcW61mxW3B5zp17BJBcyuJ3ruw5cNpQqKjHFJ2qI_X6ElM1HP8ZuKmYoE0pSQqsDdX-k3PRliuDNEMOnjd-GYHPY2fztPKF3RzT0wynrn9geWsOV4YZWxAyNZz_wjoXK</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2357621290</pqid></control><display><type>article</type><title>Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Ladugin, M.A. ; Marmalyuk, A.A. ; Padalitsa, A.A. ; Bagaev, T.A. ; Andreev, A.Yu ; Telegin, K.Yu ; Lobintsov, A.V. ; Davydova, E.I. ; Sapozhnikov, S.M. ; Danilov, A.I. ; Podkopaev, A.V. ; Ivanova, E.B. ; Simakov, V.A.</creator><creatorcontrib>Ladugin, M.A. ; Marmalyuk, A.A. ; Padalitsa, A.A. ; Bagaev, T.A. ; Andreev, A.Yu ; Telegin, K.Yu ; Lobintsov, A.V. ; Davydova, E.I. ; Sapozhnikov, S.M. ; Danilov, A.I. ; Podkopaev, A.V. ; Ivanova, E.B. ; Simakov, V.A.</creatorcontrib><description>The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.</description><identifier>ISSN: 1063-7818</identifier><identifier>EISSN: 1468-4799</identifier><identifier>DOI: 10.1070/QEL16365</identifier><language>eng</language><publisher>Bristol: Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</publisher><subject>AlGaAs/GaAs ; ALUMINIUM ARSENIDES ; Aluminum gallium arsenides ; Bars ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DIODE-PUMPED SOLID STATE LASERS ; EFFICIENCY ; ELECTRIC POTENTIAL ; Gallium arsenide ; GALLIUM ARSENIDES ; Heterostructures ; laser diode bars ; Laser pumping ; Lasers ; MOCVD ; POWER GENERATION ; PUMPING ; QUANTUM WELLS ; quantum-well heterostructures ; SEMICONDUCTOR LASERS</subject><ispartof>Quantum electronics (Woodbury, N.Y.), 2017-05, Vol.47 (4), p.291-293</ispartof><rights>2017 Kvantovaya Elektronika, Turpion Ltd and IOP Publishing Ltd</rights><rights>Copyright IOP Publishing May 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c341t-1af336c6cd2c9b67c5fa5829546ea601b534b5cd95d4cbb71e84ff03502a08b83</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1070/QEL16365/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>230,314,776,780,881,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22726020$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ladugin, M.A.</creatorcontrib><creatorcontrib>Marmalyuk, A.A.</creatorcontrib><creatorcontrib>Padalitsa, A.A.</creatorcontrib><creatorcontrib>Bagaev, T.A.</creatorcontrib><creatorcontrib>Andreev, A.Yu</creatorcontrib><creatorcontrib>Telegin, K.Yu</creatorcontrib><creatorcontrib>Lobintsov, A.V.</creatorcontrib><creatorcontrib>Davydova, E.I.</creatorcontrib><creatorcontrib>Sapozhnikov, S.M.</creatorcontrib><creatorcontrib>Danilov, A.I.</creatorcontrib><creatorcontrib>Podkopaev, A.V.</creatorcontrib><creatorcontrib>Ivanova, E.B.</creatorcontrib><creatorcontrib>Simakov, V.A.</creatorcontrib><title>Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70</title><title>Quantum electronics (Woodbury, N.Y.)</title><addtitle>Quantum Electron</addtitle><description>The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.</description><subject>AlGaAs/GaAs</subject><subject>ALUMINIUM ARSENIDES</subject><subject>Aluminum gallium arsenides</subject><subject>Bars</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DIODE-PUMPED SOLID STATE LASERS</subject><subject>EFFICIENCY</subject><subject>ELECTRIC POTENTIAL</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>Heterostructures</subject><subject>laser diode bars</subject><subject>Laser pumping</subject><subject>Lasers</subject><subject>MOCVD</subject><subject>POWER GENERATION</subject><subject>PUMPING</subject><subject>QUANTUM WELLS</subject><subject>quantum-well heterostructures</subject><subject>SEMICONDUCTOR LASERS</subject><issn>1063-7818</issn><issn>1468-4799</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqNkE9LAzEUxBdRUGrBjxDQg5e1-Z_ssZRahYIIeg7Z7AuNrLvbJIv47d1SpVcvM-_wY5g3RXFD8APBCi9e11simRRnxRXhUpdcVdX5dGPJSqWJvizmKYUaC86x0FJfFWZrE0TUhL4BVNuYJknQoL5Dy3Zjl2lxELQfbZfHz_IL2hbtIEPsU46jy2OEhL5C3iHbIfA-uACd-0bjgHKPFL4uLrxtE8x_fVa8P67fVk_l9mXzvFpuS8c4ySWxnjHppGuoq2qpnPBWaFoJLsFKTGrBeC1cU4mGu7pWBDT3HjOBqcW61mxW3B5zp17BJBcyuJ3ruw5cNpQqKjHFJ2qI_X6ElM1HP8ZuKmYoE0pSQqsDdX-k3PRliuDNEMOnjd-GYHPY2fztPKF3RzT0wynrn9geWsOV4YZWxAyNZz_wjoXK</recordid><startdate>20170501</startdate><enddate>20170501</enddate><creator>Ladugin, M.A.</creator><creator>Marmalyuk, A.A.</creator><creator>Padalitsa, A.A.</creator><creator>Bagaev, T.A.</creator><creator>Andreev, A.Yu</creator><creator>Telegin, K.Yu</creator><creator>Lobintsov, A.V.</creator><creator>Davydova, E.I.</creator><creator>Sapozhnikov, S.M.</creator><creator>Danilov, A.I.</creator><creator>Podkopaev, A.V.</creator><creator>Ivanova, E.B.</creator><creator>Simakov, V.A.</creator><general>Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</general><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20170501</creationdate><title>Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70</title><author>Ladugin, M.A. ; Marmalyuk, A.A. ; Padalitsa, A.A. ; Bagaev, T.A. ; Andreev, A.Yu ; Telegin, K.Yu ; Lobintsov, A.V. ; Davydova, E.I. ; Sapozhnikov, S.M. ; Danilov, A.I. ; Podkopaev, A.V. ; Ivanova, E.B. ; Simakov, V.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c341t-1af336c6cd2c9b67c5fa5829546ea601b534b5cd95d4cbb71e84ff03502a08b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>AlGaAs/GaAs</topic><topic>ALUMINIUM ARSENIDES</topic><topic>Aluminum gallium arsenides</topic><topic>Bars</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DIODE-PUMPED SOLID STATE LASERS</topic><topic>EFFICIENCY</topic><topic>ELECTRIC POTENTIAL</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>Heterostructures</topic><topic>laser diode bars</topic><topic>Laser pumping</topic><topic>Lasers</topic><topic>MOCVD</topic><topic>POWER GENERATION</topic><topic>PUMPING</topic><topic>QUANTUM WELLS</topic><topic>quantum-well heterostructures</topic><topic>SEMICONDUCTOR LASERS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ladugin, M.A.</creatorcontrib><creatorcontrib>Marmalyuk, A.A.</creatorcontrib><creatorcontrib>Padalitsa, A.A.</creatorcontrib><creatorcontrib>Bagaev, T.A.</creatorcontrib><creatorcontrib>Andreev, A.Yu</creatorcontrib><creatorcontrib>Telegin, K.Yu</creatorcontrib><creatorcontrib>Lobintsov, A.V.</creatorcontrib><creatorcontrib>Davydova, E.I.</creatorcontrib><creatorcontrib>Sapozhnikov, S.M.</creatorcontrib><creatorcontrib>Danilov, A.I.</creatorcontrib><creatorcontrib>Podkopaev, A.V.</creatorcontrib><creatorcontrib>Ivanova, E.B.</creatorcontrib><creatorcontrib>Simakov, V.A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ladugin, M.A.</au><au>Marmalyuk, A.A.</au><au>Padalitsa, A.A.</au><au>Bagaev, T.A.</au><au>Andreev, A.Yu</au><au>Telegin, K.Yu</au><au>Lobintsov, A.V.</au><au>Davydova, E.I.</au><au>Sapozhnikov, S.M.</au><au>Danilov, A.I.</au><au>Podkopaev, A.V.</au><au>Ivanova, E.B.</au><au>Simakov, V.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70</atitle><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle><addtitle>Quantum Electron</addtitle><date>2017-05-01</date><risdate>2017</risdate><volume>47</volume><issue>4</issue><spage>291</spage><epage>293</epage><pages>291-293</pages><issn>1063-7818</issn><eissn>1468-4799</eissn><abstract>The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.</abstract><cop>Bristol</cop><pub>Kvantovaya Elektronika, Turpion Ltd and IOP Publishing</pub><doi>10.1070/QEL16365</doi><tpages>3</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | AlGaAs/GaAs ALUMINIUM ARSENIDES Aluminum gallium arsenides Bars CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DIODE-PUMPED SOLID STATE LASERS EFFICIENCY ELECTRIC POTENTIAL Gallium arsenide GALLIUM ARSENIDES Heterostructures laser diode bars Laser pumping Lasers MOCVD POWER GENERATION PUMPING QUANTUM WELLS quantum-well heterostructures SEMICONDUCTOR LASERS |
| title | Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70 |
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