Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70

The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage an...

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Veröffentlicht in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 2017-05, Vol.47 (4), p.291-293
Hauptverfasser:	Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A., Bagaev, T.A., Andreev, A.Yu, Telegin, K.Yu, Lobintsov, A.V., Davydova, E.I., Sapozhnikov, S.M., Danilov, A.I., Podkopaev, A.V., Ivanova, E.B., Simakov, V.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaAs/GaAs ALUMINIUM ARSENIDES Aluminum gallium arsenides Bars CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DIODE-PUMPED SOLID STATE LASERS EFFICIENCY ELECTRIC POTENTIAL Gallium arsenide GALLIUM ARSENIDES Heterostructures laser diode bars Laser pumping Lasers MOCVD POWER GENERATION PUMPING QUANTUM WELLS quantum-well heterostructures SEMICONDUCTOR LASERS
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Zusammenfassung:	The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.
ISSN:	1063-7818 1468-4799
DOI:	10.1070/QEL16365