High-power EUV (13.5 nm) light source
Characteristics of a discharge-produced plasma (DPP) light source in the spectral band 13.5{+-}0.135 nm, developed for Extreme Ultra Violet (EUV) lithography, are presented. EUV light is generated by DPP in tin vapour formed between rotating disk electrodes. The discharge is ignited by a focused las...
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Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2010-10, Vol.40 (8), p.720-726 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Characteristics of a discharge-produced plasma (DPP) light source in the spectral band 13.5{+-}0.135 nm, developed for Extreme Ultra Violet (EUV) lithography, are presented. EUV light is generated by DPP in tin vapour formed between rotating disk electrodes. The discharge is ignited by a focused laser beam. The EUV power 1000 W/(2{pi} sr) in the spectral band 13.5{+-}0.135 nm was achieved with input power about of {approx}63 kW to the plasma at a pulse repetition rate {approx}7 kHz . The results of numerical simulation are compared with the experimental data. (interaction of laser radiation with matter. laser plasma) |
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ISSN: | 1063-7818 1468-4799 |
DOI: | 10.1070/QE2010v040n08ABEH014369 |