Percolation and emission spectra of a laser plasma upon ablation of silicon and silicon-containing composites

The emission spectra of plasmas produced near the surface of silicon and sulphur samples and their mixtures by nanosecond and millisecond laser pulses are studied in a broad range of pressures of buffer gases. The percolation dependences are obtained for composite Si-S, Si-SiO{sub 2}, and SiO{sub 2}...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2006-05, Vol.36 (5), p.435-439
Hauptverfasser: Kask, Nikolai E, Michurin, Sergei V, Fedorov, Gennadii M
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Sprache:eng
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Zusammenfassung:The emission spectra of plasmas produced near the surface of silicon and sulphur samples and their mixtures by nanosecond and millisecond laser pulses are studied in a broad range of pressures of buffer gases. The percolation dependences are obtained for composite Si-S, Si-SiO{sub 2}, and SiO{sub 2}-S targets. It is found that experimental percolation thresholds coincide with the typical threshold for three-dimensional continual percolation. (interaction of laser radiation with matter. laser plasma)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2006v036n05ABEH013243