Solid-state reactions at niobium–germanium interfaces in hybrid quantum electronics
Hybrid superconductor–semiconductor materials systems are promising candidates for quantum computing applications. Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin temperatures. Ge quantum wells have been among the semiconducting platforms in...
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| Veröffentlicht in: | AIP advances 2024-09, Vol.14 (9), p.095311-095311-6 |
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| container_end_page | 095311-6 |
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| creator | Langa, B. Sapkota, D. Lainez, I. Haight, R. Srijanto, B. Feldman, L. Hijazi, H. Zhu, X. Hu, L. Kim, M. Sardashti, K. |
| description | Hybrid superconductor–semiconductor materials systems are promising candidates for quantum computing applications. Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin temperatures. Ge quantum wells have been among the semiconducting platforms interfaced with superconducting Al to realize voltage tunable Josephson junctions. Here, we explore Nb as a superconducting material in direct contact with Ge channels by focusing on the solid-state reactions at the Nb/Ge interfaces. We employ Nb evaporation at cryogenic temperatures (∼100 K) to establish a baseline structure with atomically and chemically abrupt Nb/Ge interfaces. By conducting systematic photoelectron spectroscopy and transport measurements on Nb/Ge samples across varying annealing temperatures, we elucidated the influence of Ge out-diffusion on the ultimate performance of superconducting electronics. This study underlines the need for low-temperature growth to minimize chemical intermixing and band bending at the Nb/Ge interfaces. |
| doi_str_mv | 10.1063/5.0221366 |
| format | Article |
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Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin temperatures. Ge quantum wells have been among the semiconducting platforms interfaced with superconducting Al to realize voltage tunable Josephson junctions. Here, we explore Nb as a superconducting material in direct contact with Ge channels by focusing on the solid-state reactions at the Nb/Ge interfaces. We employ Nb evaporation at cryogenic temperatures (∼100 K) to establish a baseline structure with atomically and chemically abrupt Nb/Ge interfaces. By conducting systematic photoelectron spectroscopy and transport measurements on Nb/Ge samples across varying annealing temperatures, we elucidated the influence of Ge out-diffusion on the ultimate performance of superconducting electronics. This study underlines the need for low-temperature growth to minimize chemical intermixing and band bending at the Nb/Ge interfaces.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0221366</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Cryogenic temperature ; Electric potential ; Electronics ; Germanium ; Josephson junctions ; Low temperature ; Niobium ; Photoelectrons ; Quantum computing ; Quantum electronics ; Quantum wells ; Semiconductor materials ; Solid state ; Superconductivity ; Voltage</subject><ispartof>AIP advances, 2024-09, Vol.14 (9), p.095311-095311-6</ispartof><rights>Author(s)</rights><rights>2024 Author(s). 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Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin temperatures. Ge quantum wells have been among the semiconducting platforms interfaced with superconducting Al to realize voltage tunable Josephson junctions. Here, we explore Nb as a superconducting material in direct contact with Ge channels by focusing on the solid-state reactions at the Nb/Ge interfaces. We employ Nb evaporation at cryogenic temperatures (∼100 K) to establish a baseline structure with atomically and chemically abrupt Nb/Ge interfaces. By conducting systematic photoelectron spectroscopy and transport measurements on Nb/Ge samples across varying annealing temperatures, we elucidated the influence of Ge out-diffusion on the ultimate performance of superconducting electronics. 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| subjects | Cryogenic temperature Electric potential Electronics Germanium Josephson junctions Low temperature Niobium Photoelectrons Quantum computing Quantum electronics Quantum wells Semiconductor materials Solid state Superconductivity Voltage |
| title | Solid-state reactions at niobium–germanium interfaces in hybrid quantum electronics |
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