Self-cooling in reverse biased p-InAsSbP/n-InAs0.9Sb0.1 heterostructures

Self-cooling in reverse biased p-InAsSbP/n-InAs0.9Sb0.1 heterostructures

2D thermal radiation distribution together with I–V and L–I characteristics has been measured and analyzed in forward and reverse biased p–n heterostructures based on InAs0.9Sb0.1 and grown onto n-InAs substrates. The measurements revealed a sufficient difference in the temperature distribution onto...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2024-11, Vol.136 (19)
Hauptverfasser: Karandashev, S. A., Lavrov, A. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A.
Format: Artikel
Sprache:eng
Schlagworte:
Electron phonon interactions
Heat pumps
Heterostructures
Indium arsenide antimonide phosphide
P-n junctions
Radiation distribution
Temperature distribution
Thermal radiation
Two dimensional analysis
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:2D thermal radiation distribution together with I–V and L–I characteristics has been measured and analyzed in forward and reverse biased p–n heterostructures based on InAs0.9Sb0.1 and grown onto n-InAs substrates. The measurements revealed a sufficient difference in the temperature distribution onto the sample surface at forward and reverse bias, which is explained by an impact of heat pump operation initiated by an electron–phonon interaction at the p–n junction and diode contacts at U 
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0213702