Study of the mechanism of single event burnout in lateral depletion-mode Ga2O3 MOSFET devices via TCAD simulation

This study investigates the sensitive region and safe operation voltage of single-event burnout (SEB) in lateral depletion-mode Ga2O3 MOSFET devices via technology computer aided design simulation. Based on the distribution of the electric field, carrier concentration, and electron current density w...

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Veröffentlicht in:	Journal of applied physics 2024-04, Vol.135 (14)
Hauptverfasser:	Wang, Kejia, Wang, Zujun, Cao, Rongxing, Liu, Hanxun, Chang, Wenjing, Zhao, Lin, Mei, Bo, Lv, He, Zeng, Xianghua, Xue, Yuxiong
Format:	Artikel
Sprache:	eng
Schlagworte:	CAD Carrier density Computer aided design Current carriers Depletion Electric fields Gallium oxides MOSFETs P-n junctions Radiation damage
Online-Zugang:	Volltext
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