Study of the mechanism of single event burnout in lateral depletion-mode Ga2O3 MOSFET devices via TCAD simulation

Study of the mechanism of single event burnout in lateral depletion-mode Ga2O3 MOSFET devices via TCAD simulation

This study investigates the sensitive region and safe operation voltage of single-event burnout (SEB) in lateral depletion-mode Ga2O3 MOSFET devices via technology computer aided design simulation. Based on the distribution of the electric field, carrier concentration, and electron current density w...

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Veröffentlicht in:Journal of applied physics 2024-04, Vol.135 (14)
Hauptverfasser: Wang, Kejia, Wang, Zujun, Cao, Rongxing, Liu, Hanxun, Chang, Wenjing, Zhao, Lin, Mei, Bo, Lv, He, Zeng, Xianghua, Xue, Yuxiong
Format: Artikel
Sprache:eng
Schlagworte:
CAD
Carrier density
Computer aided design
Current carriers
Depletion
Electric fields
Gallium oxides
MOSFETs
P-n junctions
Radiation damage
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Beschreibung
Zusammenfassung:This study investigates the sensitive region and safe operation voltage of single-event burnout (SEB) in lateral depletion-mode Ga2O3 MOSFET devices via technology computer aided design simulation. Based on the distribution of the electric field, carrier concentration, and electron current density when SEB occurs, the radiation damage mechanism of SEB is proposed. The mechanism of SEB in Ga2O3 MOSFET was revealed to be the result of a unique structure without a PN junction within it, which possesses gate control ability and exerts a significant influence on the conduction of the depletion region.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0184704