Oxygen vacancies stabilized 180 ° charged domain walls in ferroelectric hafnium oxide

Ferroelectric domain walls (DWs) are spatial interfaces separating domains with distinct polarization orientations. Among these DWs, some can carry bound charges and display metallic-like conductivity. The feature is highly of interest for future nanoelectronics. However, the inherent instability of charged domain walls (CDWs) has posed a critical challenge for their experimental exploration. This Letter reports the head-to-head (HH) and tail-to-tail (TT) 180 ° CDWs within the context of ferroelectric hafnium oxide. We proposed that oxygen vacancy is a crucial factor stabilizing the periodic CDWs. Through meticulous first-principles calculations, we elaborated on the intricate properties of these CDWs, including their polarization profiles, and potential and charge distributions. Furthermore, we calculated the energy barrier for layer-by-layer propagation of a HH wall and carefully discussed the migration of a TT wall with oxygen vacancy. Our study can shed more light onto the characteristics of CDWs and their implications to hafnia-based ferroelectric devices.