Construction of type-II SnO2/InGaN nanorods heterostructure toward high photoelectrochemical performance

Exploring highly efficient and stable photoelectrode material is essential for high-performance photoelectrochemical (PEC) water-splitting applications. III-nitride semiconductors, particularly InGaN, have been considered as prospective materials for PEC hydrogen evolution. However, their surface states and other recombination centers, which enhance the charge recombination kinetics, are bottlenecks for the high PEC performance. In this work, we report the construction of type-II heterojunction by sputter depositing SnO2 on InGaN nanorods (NRs) to promote interfacial carrier transport and thereby enhance PEC performance. The energy band offsets at the SnO2/InGaN NRs interface were analyzed by x-ray photoelectron spectroscopy. Type-II heterojunction was defined at the SnO2/InGaN NRs interface with a valence band offset of 0.77 eV and conduction band offset of 0.25 eV. The photocurrent density of the SnO2/InGaN NRs photoanode is 7.09 mA/cm2 at 0.77 V vs Ag/AgCl electrode with 80 nm SnO2 thickness, which is ∼14-fold higher than that of the pristine InGaN NRs photoanode. Furthermore, the applied bias photo-to-current efficiency of SnO2/InGaN NRs photoanode records 3.36% at 0.77 V vs Ag/AgCl electrode. The enhanced PEC performance is mainly ascribed to the formation of high-quality SnO2/InGaN NRs heterojunction that enforces the directional charge transfer and substantially boosts the separation of photogenerated electron–hole pairs at the interface of InGaN NRs and SnO2. Overall, this work sheds light on the promising strategy to design and fabricate III-nitride nanostructures-based photoelectrodes for feasible PEC water-splitting applications.