Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

In this Letter, we present long-wavelength microdisk lasers based on five stacks of self-assembled InAs/InAlGaAs quantum dots as the active medium, which were grown on InP (001) substrate by solid-source molecular beam epitaxy. The 8.4-μm-diameter quantum dot microdisk laser is operated at room temp...

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Veröffentlicht in:Applied physics letters 2023-03, Vol.122 (11)
Hauptverfasser: Jia, Hui, Yu, Xuezhe, Zhou, Taojie, Dear, Calum, Yuan, Jiajing, Tang, Mingchu, Yan, Zhao, Ratiu, Bogdan-Petrin, Li, Qiang, Seeds, Alwyn, Liu, Huiyun, Chen, Siming
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Sprache:eng
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Zusammenfassung:In this Letter, we present long-wavelength microdisk lasers based on five stacks of self-assembled InAs/InAlGaAs quantum dots as the active medium, which were grown on InP (001) substrate by solid-source molecular beam epitaxy. The 8.4-μm-diameter quantum dot microdisk laser is operated at room temperature under pulsed optically pumping conditions. Multi-wavelength lasing emissions at ∼1.6 μm were achieved with a low lasing threshold of 30 μW and a quality factor of ∼1336. The lasing behavior was verified by the “S” shape L–L curve, linewidth narrowing effect, and strong speckle patterns of the collected near field intensity profile. The demonstrated long-wavelength lasers with low threshold and ultracompact footprint can find potential applications in integrated gas detection and highly localized label-free biological and biochemical sensing.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0142391