Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate
In this Letter, we present long-wavelength microdisk lasers based on five stacks of self-assembled InAs/InAlGaAs quantum dots as the active medium, which were grown on InP (001) substrate by solid-source molecular beam epitaxy. The 8.4-μm-diameter quantum dot microdisk laser is operated at room temp...
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Veröffentlicht in: | Applied physics letters 2023-03, Vol.122 (11) |
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Sprache: | eng |
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Zusammenfassung: | In this Letter, we present long-wavelength microdisk lasers based on five stacks of self-assembled InAs/InAlGaAs quantum dots as the active medium, which were grown on InP (001) substrate by solid-source molecular beam epitaxy. The 8.4-μm-diameter quantum dot microdisk laser is operated at room temperature under pulsed optically pumping conditions. Multi-wavelength lasing emissions at ∼1.6 μm were achieved with a low lasing threshold of 30 μW and a quality factor of ∼1336. The lasing behavior was verified by the “S” shape L–L curve, linewidth narrowing effect, and strong speckle patterns of the collected near field intensity profile. The demonstrated long-wavelength lasers with low threshold and ultracompact footprint can find potential applications in integrated gas detection and highly localized label-free biological and biochemical sensing. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0142391 |