8-band k  ⋅ p modeling of strained InxGa(1−x)As/InP heterostructure nanowires

An 8-band k ⋅ p theory is implemented for studying the electronic properties of near-surface lateral InxGa(1−x)As/InP heterostructure nanowires in the (100) direction. The change in bandgap and effective mass due to inhomogeneous strain are compared to unstrained scenario nanowires, and the lattice mismatch is varied from −3.2% to 1%. The nanowires' height is H = 5, 13 nm, and the width varies from the smallest possible width for a given height to 100 nm. The change in the bandgap exhibited a nonlinear trait with strain for all sizes of the nanowire. The tensile strain reduces the bandgap irrespective of the width of the nanowire for a given height, while the effect of compressive strain on change in the bandgap becomes width dependent. Minima and maxima in the change in effective mass with respect to the nanowire width are observed in compressively and tensile strained nanowires, respectively, due to the interplay of quantum confinement and strain. The electrical performance of a single nanowire In0.85Ga0.15As/InP MOSFET in quantum capacitance limit is discussed for various nanowire sizes. The implemented 8-band k ⋅ p method is verified with the available experimental work and demonstrated that the developed model can be extended to study electronic parameters of arbitrarily shaped core–shell structures over a wide range of strain.