Magnetic and transport properties of electron doped EuTiO3 thin films with La3+ (4f0) or Gd3+ (4f7) donors grown by gas source molecular beam epitaxy

EuTiO3 (ETO) is a unique magnetic semiconductor with a large localized magnetic moment of Eu2+ (4f 7). By the doping of high-mobility electrons in the Ti 3d conduction band, peculiar magnetotransport properties such as the unconventional anomalous Hall effect (AHE) due to Berry curvature in momentum space, as well as the Shubnikov–de Haas oscillations of spin polarized electrons, have been observed. In this study, we have examined the physical properties of high quality ETO films with La3+ (4f0) or Gd3+ (4f7) donors (ELTO or EGTO) grown on nearly lattice matched SrTiO3 substrates with a gas source molecular beam epitaxy. We find that the anti-ferromagnetic ordering of ELTO is destabilized by the vacancy of the magnetic moment on the La-site for ELTO. The maximum electron mobility for ELTO (