Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 μm-thick Si0.06Ge0.90Sn0.04 layer that is nearly lattice-matched to a Ge o...
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| Veröffentlicht in: | Journal of applied physics 2022-11, Vol.132 (19) |
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| container_title | Journal of applied physics |
| container_volume | 132 |
| creator | Assali, S. Attiaoui, A. Koelling, S. Atalla, M. R. M. Kumar, A. Nicolas, J. Chowdhury, F. A. Lemieux-Leduc, C. Moutanabbir, O. |
| description | A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 μm-thick Si0.06Ge0.90Sn0.04 layer that is nearly lattice-matched to a Ge on Si substrate. Atomic-level studies demonstrate high crystalline quality and uniform composition and show no sign of short-range ordering and clusters. Room-temperature spectroscopic ellipsometry and transmission measurements show direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices operating at room temperature exhibit dark current and spectral responsivity (1 A/W below 1.5 μm wavelengths) similar to Ge on Si devices, with the advantage of a near-infrared bandgap tunable by alloy composition. These results underline the relevance of SiGeSn semiconductors in implementing a group IV material platform for silicon-integrated infrared optoelectronics. |
| doi_str_mv | 10.1063/5.0120505 |
| format | Article |
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Si0.06Ge0.90Sn0.04 photoconductive devices operating at room temperature exhibit dark current and spectral responsivity (1 A/W below 1.5 μm wavelengths) similar to Ge on Si devices, with the advantage of a near-infrared bandgap tunable by alloy composition. These results underline the relevance of SiGeSn semiconductors in implementing a group IV material platform for silicon-integrated infrared optoelectronics.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0120505</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorption ; Applied physics ; Composition ; Dark current ; Energy gap ; Germanium ; Lattice matching ; Optoelectronics ; Room temperature ; Silicon substrates ; Spectroellipsometry</subject><ispartof>Journal of applied physics, 2022-11, Vol.132 (19)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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Room-temperature spectroscopic ellipsometry and transmission measurements show direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices operating at room temperature exhibit dark current and spectral responsivity (1 A/W below 1.5 μm wavelengths) similar to Ge on Si devices, with the advantage of a near-infrared bandgap tunable by alloy composition. 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Room-temperature spectroscopic ellipsometry and transmission measurements show direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices operating at room temperature exhibit dark current and spectral responsivity (1 A/W below 1.5 μm wavelengths) similar to Ge on Si devices, with the advantage of a near-infrared bandgap tunable by alloy composition. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Absorption Applied physics Composition Dark current Energy gap Germanium Lattice matching Optoelectronics Room temperature Silicon substrates Spectroellipsometry |
| title | Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics |
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