High performance near-infrared MoTe2/Ge heterojunction photodetector fabricated by direct growth of Ge flake on MoTe2 film substrate
We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor deposition method. A thin transition layer (∼4 nm) mainly composed of polycrystalline germanium at the MoTe2/Ge interface was verified during...
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Veröffentlicht in: | Applied physics letters 2022-08, Vol.121 (8) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor deposition method. A thin transition layer (∼4 nm) mainly composed of polycrystalline germanium at the MoTe2/Ge interface was verified during the Ge flake growth. The MoTe2/Ge heterojunction-based photodetector exhibits both the response speed with a rise/fall time of 7/4 μs and the photoresponsivity and detectivity with 4.87 A W−1 and 5.02 × 1011 Jones under zero bias in the near-infrared regime, respectively. The characteristics of device performance imply its practical applicability as building block for potential near-infrared integrated photonics. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0103018 |