High performance near-infrared MoTe2/Ge heterojunction photodetector fabricated by direct growth of Ge flake on MoTe2 film substrate

We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor deposition method. A thin transition layer (∼4 nm) mainly composed of polycrystalline germanium at the MoTe2/Ge interface was verified during...

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Veröffentlicht in:Applied physics letters 2022-08, Vol.121 (8)
Hauptverfasser: Lei, Wenyu, Wen, Xiaokun, Cao, Guowei, Yang, Li, Zhang, Pengzhen, Zhuge, Fuwei, Chang, Haixin, Zhang, Wenfeng
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Sprache:eng
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Zusammenfassung:We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor deposition method. A thin transition layer (∼4 nm) mainly composed of polycrystalline germanium at the MoTe2/Ge interface was verified during the Ge flake growth. The MoTe2/Ge heterojunction-based photodetector exhibits both the response speed with a rise/fall time of 7/4 μs and the photoresponsivity and detectivity with 4.87 A W−1 and 5.02 × 1011 Jones under zero bias in the near-infrared regime, respectively. The characteristics of device performance imply its practical applicability as building block for potential near-infrared integrated photonics.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0103018