Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

The trade-off between mobility and stability in oxide thin-film transistors (TFTs) hinders further advances of an active-matrix flat panel display. Herein, a solution-processed bilayer active channel is designed to improve the stability and mobility simultaneously. The optical bandgap and work funct...

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Veröffentlicht in:	Applied physics letters 2022-11, Vol.121 (19)
Hauptverfasser:	He, Penghui, Ding, Chunchun, Zou, Xuming, Li, Guoli, Hu, Wei, Ma, Chao, Flandre, Denis, Iñíguez, Benjamín, Liao, Lei, Lan, Linfeng, Liu, Xingqiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bias Conduction bands Film thickness Flat panel displays Illumination Indium oxides Semiconductor devices Stability Thin film transistors Threshold voltage Work functions
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