Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

The trade-off between mobility and stability in oxide thin-film transistors (TFTs) hinders further advances of an active-matrix flat panel display. Herein, a solution-processed bilayer active channel is designed to improve the stability and mobility simultaneously. The optical bandgap and work funct...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2022-11, Vol.121 (19)
Hauptverfasser: He, Penghui, Ding, Chunchun, Zou, Xuming, Li, Guoli, Hu, Wei, Ma, Chao, Flandre, Denis, Iñíguez, Benjamín, Liao, Lei, Lan, Linfeng, Liu, Xingqiang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The trade-off between mobility and stability in oxide thin-film transistors (TFTs) hinders further advances of an active-matrix flat panel display. Herein, a solution-processed bilayer active channel is designed to improve the stability and mobility simultaneously. The optical bandgap and work function of Tb:In2O3 films are modulated by tuning the film thickness and Tb concentration of Tb-doped indium oxide (Tb:In2O3) films. Large conduction band offset is achieved in a Tb:In2O3 bilayer channel, which induces accumulation of abundant electrons at the interface. The mobility is significantly improved to 38.2 cm2/V s, and the photoinduced stability of bilayer Tb:In2O3 TFTs is improved with low threshold voltage shift of 0.26 and −0.38 V under negative-bias illumination stress and negative-bias temperature illumination stress, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0098765