High precision reconstruction of silicon photonics chaos with stacked CNN-LSTM neural networks

Silicon-based optical chaos has many advantages, such as compatibility with complementary metal oxide semiconductor (CMOS) integration processes, ultra-small size, and high bandwidth. Generally, it is challenging to reconstruct chaos accurately because of its initial sensitivity and high complexity....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Chaos (Woodbury, N.Y.) N.Y.), 2022-05, Vol.32 (5), p.053112-053112
Hauptverfasser: Cheng, Wei, Feng, Junbo, Wang, Yan, Peng, Zheng, Cheng, Hao, Ren, Xiaodong, Shuai, Yubei, Zang, Shengyin, Liu, Hao, Pu, Xun, Yang, Junbo, Wu, Jiagui
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Silicon-based optical chaos has many advantages, such as compatibility with complementary metal oxide semiconductor (CMOS) integration processes, ultra-small size, and high bandwidth. Generally, it is challenging to reconstruct chaos accurately because of its initial sensitivity and high complexity. Here, a stacked convolutional neural network (CNN)-long short-term memory (LSTM) neural network model is proposed to reconstruct optical chaos with high accuracy. Our network model combines the advantages of both CNN and LSTM modules. Further, a theoretical model of integrated silicon photonics micro-cavity is introduced to generate chaotic time series for use in chaotic reconstruction experiments. Accordingly, we reconstructed the one-dimensional, two-dimensional, and three-dimensional chaos. The experimental results show that our model outperforms the LSTM, gated recurrent unit (GRU), and CNN models in terms of MSE, MAE, and R-squared metrics. For example, the proposed model has the best value of this metric, with a maximum improvement of 83.29% and 49.66%. Furthermore, 1D, 2D, and 3D chaos were all significantly improved with the reconstruction tasks.
ISSN:1054-1500
1089-7682
DOI:10.1063/5.0082993