Refractive index dispersion of BGa(As)P alloys in the near-infrared for III-V laser integration on silicon

BxGa(1−x)P and BxGa(1−x)AsyP(1−y) alloys are of potential interest in III-V heterostructures for integration with silicon. Waveguide design utilizing these alloys requires an understanding of the refractive index properties and their variation with composition. Refractive index dispersion was measured and modeled in the wavelength range of 827–2254 nm using spectroscopic ellipsometry at room temperature for samples with boron and arsenic fractions from 0% to 6.6% and 0% to 17%, respectively. The refractive index was found to increase with increasing boron composition as a result of strain due to lattice constant mismatch with the silicon substrate. For the arsenic-containing alloy, the refractive index was found to increase independently of strain. An empirical model based on the composition dependent variation of Cauchy dispersion function coefficients was developed for BGaAsP alloys lattice matched to silicon at the growth temperature. This model can be used to calculate the wavelength dependent refractive index of lattice matched boron and arsenic combinations for applications in semiconductor waveguides, an example of which is proposed. The results of this study are of interest more broadly for other III-V on silicon applications including photovoltaics and more generally in terms of the ellipsometric investigations of thin films on non-native substrates.