Strained In x Ga(1− x )As/InP near surface quantum wells and MOSFETs

We present electronic band structure properties of strained InxGa(1−x)As/InP heterostructure near surface quantum wells oriented in the (100) crystallographic direction using eight-band k·p theory, which are further parameterized by an energy level, effective mass, and nonparabolicity factor. The el...

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Veröffentlicht in:	Applied physics letters 2022-02, Vol.120 (9)
Hauptverfasser:	Garigapati, Navya Sri, Södergren, Lasse, Olausson, Patrik, Lind, Erik
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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