Strained In x Ga(1− x )As/InP near surface quantum wells and MOSFETs

We present electronic band structure properties of strained InxGa(1−x)As/InP heterostructure near surface quantum wells oriented in the (100) crystallographic direction using eight-band k·p theory, which are further parameterized by an energy level, effective mass, and nonparabolicity factor. The electronic band structure parameters are studied for the well composition of 0.2 ≤ x ≤ 1 and thickness from 5 to 13 nm. The bandgap and effective mass of the strained wells are increased for x >0.53 due to compression strain and decreased for x