Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

A resonant absorber enables low-temperature sintering of InZnO sol–gel films with low-energy-density intense pulse light (IPL) irradiation (1 J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure and sintered with irradiation of 50 pulses (∼50 J/cm2) demonstrates good electrical properties with a mobility of 0.34 cm2/V s and an on–off ratio of 106 and a substrate temperature under 210 °C, showcasing that employing a resonant absorber could enable low-temperature sintering of sol–gel films with low-energy-density irradiation. Further x-ray photoelectron spectroscopy analysis of the oxygen and nitrogen peaks indicates that IPL irradiation facilitated sol–gel reactions in films.