Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector

Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5–5.9 eV, has been proposed as a potential material for a high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films with bandgap of 5.6 eV are grown on GaN substrates through sputtering...

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Veröffentlicht in:	Applied physics letters 2021-05, Vol.118 (21)
Hauptverfasser:	Zhang, Dan, Lin, Wanmin, Lin, Zhuogeng, Jia, Lemin, Zheng, Wei, Huang, Feng
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Crystal structure Dark current Gallium nitrides Graphene Lutetium Lutetium oxide Magnetron sputtering Materials selection Photoelectricity Photometers Response time Substrates Ultraviolet detectors Wide bandgap semiconductors
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