Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector
Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5–5.9 eV, has been proposed as a potential material for a high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films with bandgap of 5.6 eV are grown on GaN substrates through sputtering...
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| Veröffentlicht in: | Applied physics letters 2021-05, Vol.118 (21) |
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| container_title | Applied physics letters |
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| creator | Zhang, Dan Lin, Wanmin Lin, Zhuogeng Jia, Lemin Zheng, Wei Huang, Feng |
| description | Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5–5.9 eV, has been proposed as a potential material for a high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films with bandgap of 5.6 eV are grown on GaN substrates through sputtering Lu2O3 target, based on which a graphene/Lu2O3/GaN DUV photovoltaic detector is constructed with its photoelectric performance being systematically studied. According to our research, under 0 V bias and 185 nm DUV irradiation, this device shows a high photoresponsivity of ∼13.7 μA/W, a short response time of ∼0.4 s, and a high light to dark current ratio of >600, which is about 1 order of magnitude higher than that of a currently reported DUV photovoltaic detector based on other films grown by magnetron sputtering. This research helps to broaden the range of candidate materials for DUV photodetectors and can work as a significant reference to develop the technology for device fabrication. |
| doi_str_mv | 10.1063/5.0048752 |
| format | Article |
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Here, crystal oriented Lu2O3 films with bandgap of 5.6 eV are grown on GaN substrates through sputtering Lu2O3 target, based on which a graphene/Lu2O3/GaN DUV photovoltaic detector is constructed with its photoelectric performance being systematically studied. According to our research, under 0 V bias and 185 nm DUV irradiation, this device shows a high photoresponsivity of ∼13.7 μA/W, a short response time of ∼0.4 s, and a high light to dark current ratio of >600, which is about 1 order of magnitude higher than that of a currently reported DUV photovoltaic detector based on other films grown by magnetron sputtering. This research helps to broaden the range of candidate materials for DUV photodetectors and can work as a significant reference to develop the technology for device fabrication.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0048752</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Crystal structure ; Dark current ; Gallium nitrides ; Graphene ; Lutetium ; Lutetium oxide ; Magnetron sputtering ; Materials selection ; Photoelectricity ; Photometers ; Response time ; Substrates ; Ultraviolet detectors ; Wide bandgap semiconductors</subject><ispartof>Applied physics letters, 2021-05, Vol.118 (21)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-fb770b5e02f92ff3f7c10a9f663fee70b8bbf68aa030bbf4fc0a8d15e0b0bce73</citedby><cites>FETCH-LOGICAL-c327t-fb770b5e02f92ff3f7c10a9f663fee70b8bbf68aa030bbf4fc0a8d15e0b0bce73</cites><orcidid>0000-0002-4623-2216 ; 0000-0003-4329-0469</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0048752$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Zhang, Dan</creatorcontrib><creatorcontrib>Lin, Wanmin</creatorcontrib><creatorcontrib>Lin, Zhuogeng</creatorcontrib><creatorcontrib>Jia, Lemin</creatorcontrib><creatorcontrib>Zheng, Wei</creatorcontrib><creatorcontrib>Huang, Feng</creatorcontrib><title>Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector</title><title>Applied physics letters</title><description>Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5–5.9 eV, has been proposed as a potential material for a high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films with bandgap of 5.6 eV are grown on GaN substrates through sputtering Lu2O3 target, based on which a graphene/Lu2O3/GaN DUV photovoltaic detector is constructed with its photoelectric performance being systematically studied. According to our research, under 0 V bias and 185 nm DUV irradiation, this device shows a high photoresponsivity of ∼13.7 μA/W, a short response time of ∼0.4 s, and a high light to dark current ratio of >600, which is about 1 order of magnitude higher than that of a currently reported DUV photovoltaic detector based on other films grown by magnetron sputtering. This research helps to broaden the range of candidate materials for DUV photodetectors and can work as a significant reference to develop the technology for device fabrication.</description><subject>Applied physics</subject><subject>Crystal structure</subject><subject>Dark current</subject><subject>Gallium nitrides</subject><subject>Graphene</subject><subject>Lutetium</subject><subject>Lutetium oxide</subject><subject>Magnetron sputtering</subject><subject>Materials selection</subject><subject>Photoelectricity</subject><subject>Photometers</subject><subject>Response time</subject><subject>Substrates</subject><subject>Ultraviolet detectors</subject><subject>Wide bandgap semiconductors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKsH_0HAk8LWyaa72XorxS9Y6MV6DfmsW9rNmmQV_70pW_QgeBhmhveZd4ZB6JLAhEBJb4sJwLRiRX6ERgQYyygh1TEaAQDNyllBTtFZCJvUFjmlI1TXfb6kd3iOO-92TWjaNe630YvPRhssRavXosPB7BrlWt2r6Dy2KbQxHV694u7NRadNNHvlHJ1YsQ3m4pDHaPVw_7J4yurl4_NiXmeK5ixmVjIGsjCQ21luLbVMERAzW5bUGpOkSkpbVkIAhVRNrQJRaZIGJEhlGB2jq8E33fzemxD5xvW-TSt5XlDCKkKAJup6oJR3IXhjeeebnfBfnADfP4sX_PCsxN4MbFBNFLFx7Q_84fwvyDtt_4P_On8DtoZ4Xw</recordid><startdate>20210524</startdate><enddate>20210524</enddate><creator>Zhang, Dan</creator><creator>Lin, Wanmin</creator><creator>Lin, Zhuogeng</creator><creator>Jia, Lemin</creator><creator>Zheng, Wei</creator><creator>Huang, Feng</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4623-2216</orcidid><orcidid>https://orcid.org/0000-0003-4329-0469</orcidid></search><sort><creationdate>20210524</creationdate><title>Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector</title><author>Zhang, Dan ; Lin, Wanmin ; Lin, Zhuogeng ; Jia, Lemin ; Zheng, Wei ; Huang, Feng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-fb770b5e02f92ff3f7c10a9f663fee70b8bbf68aa030bbf4fc0a8d15e0b0bce73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Crystal structure</topic><topic>Dark current</topic><topic>Gallium nitrides</topic><topic>Graphene</topic><topic>Lutetium</topic><topic>Lutetium oxide</topic><topic>Magnetron sputtering</topic><topic>Materials selection</topic><topic>Photoelectricity</topic><topic>Photometers</topic><topic>Response time</topic><topic>Substrates</topic><topic>Ultraviolet detectors</topic><topic>Wide bandgap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Dan</creatorcontrib><creatorcontrib>Lin, Wanmin</creatorcontrib><creatorcontrib>Lin, Zhuogeng</creatorcontrib><creatorcontrib>Jia, Lemin</creatorcontrib><creatorcontrib>Zheng, Wei</creatorcontrib><creatorcontrib>Huang, Feng</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Dan</au><au>Lin, Wanmin</au><au>Lin, Zhuogeng</au><au>Jia, Lemin</au><au>Zheng, Wei</au><au>Huang, Feng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector</atitle><jtitle>Applied physics letters</jtitle><date>2021-05-24</date><risdate>2021</risdate><volume>118</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5–5.9 eV, has been proposed as a potential material for a high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films with bandgap of 5.6 eV are grown on GaN substrates through sputtering Lu2O3 target, based on which a graphene/Lu2O3/GaN DUV photovoltaic detector is constructed with its photoelectric performance being systematically studied. According to our research, under 0 V bias and 185 nm DUV irradiation, this device shows a high photoresponsivity of ∼13.7 μA/W, a short response time of ∼0.4 s, and a high light to dark current ratio of >600, which is about 1 order of magnitude higher than that of a currently reported DUV photovoltaic detector based on other films grown by magnetron sputtering. This research helps to broaden the range of candidate materials for DUV photodetectors and can work as a significant reference to develop the technology for device fabrication.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0048752</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4623-2216</orcidid><orcidid>https://orcid.org/0000-0003-4329-0469</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2021-05, Vol.118 (21) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Crystal structure Dark current Gallium nitrides Graphene Lutetium Lutetium oxide Magnetron sputtering Materials selection Photoelectricity Photometers Response time Substrates Ultraviolet detectors Wide bandgap semiconductors |
| title | Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector |
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