Enhancing visible-light transmittance while reducing phase transition temperature of VO2 by Hf–W co-doping
In order to enhance the visible-light transmittance while reducing the insulator–metal transition (IMT) temperature, Hf–W co-doping is designed for modification of VO2. We grow high-quality HfxWyV1−x−yO2 (HfWVO2) alloy films on c-plane sapphire substrates by pulsed laser deposition, and test structu...
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Veröffentlicht in: | Applied physics letters 2021-05, Vol.118 (19), Article 192102 |
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Sprache: | eng |
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Zusammenfassung: | In order to enhance the visible-light transmittance while reducing the insulator–metal transition (IMT) temperature, Hf–W co-doping is designed for modification of VO2. We grow high-quality HfxWyV1−x−yO2 (HfWVO2) alloy films on c-plane sapphire substrates by pulsed laser deposition, and test structural, electrical, and optical properties of the films by various techniques. The Hf–W co-doped VO2 films exhibit outstanding thermochromic performances with a high luminous transmittance up to 41.1%, a fairly good near-infrared modulation capacity of 13.1%, and a low phase transition temperature of 38.9 °C. The enhanced luminous transmittance along with reduced IMT temperature in HfWVO2 is attributed to the co-doping synergetic effect of Hf and W, which effectively improves the optical bandgap and donates extra electrons into the system, respectively, while largely retaining the near-infrared modulation capacity of VO2. Our work provides an effective strategy in tailoring VO2 toward practical smart-coating applications by Hf–W co-doping. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0044516 |